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Photodiode
Preliminary
EPD-280-0-0.3-5
11.04.2007 rev. 01/07 Case TO-39 + lens Type UV-lens Technology SiC
Wavelength UV-A - UV-C
Description Highly reliable photodiode with high spectral sensitivity in the UV range (220 nm - 380 nm), mounted in hermetically sealed TO-39 package with lens, especially useful for detection of minimal radiation power Applications Environmental technology, analytical techniques, medical applications, industrial sensors, inspecting and controlling of UV radiation as well as for more general purposes
0,03
8,60
Chip Location
9, 90
O 8,33 -0,06
+0,11
0,45
0,
1
O 6,35
Anode
80 0,
13,5
1,0
6,10 - 0,11
+ 0,01
2,10
0,30
45,0 0
Miscellaneous Parameters
Tamb = 25 unless otherwise specified C, Parameter Active area / Effective active area Temperature coefficient of IPh Operating temperature range Storage temperature range Acceptance angle at 50% S Test onditions Symbol A / Aeff TC(IPh) Tamb Tstg Value 0.056/0.72 0.1 -40 to +70 -40 to +100 70 Unit mm %/K C C deg.
Optical and Electrical Characteristics
Tamb = 25 unless otherwise specified C, Parameter Breakdown voltage1) Dark current Peak sensitivity wavelength Responsivity at P Sensitivity range at 1% Spectral bandwidth at 50% Shunt resistance Noise equivalent power Specific detectivity Junction capacitance Photo current at = 254 nm1,2)
1) 2)
Test conditions IR = 100 A VR = 1 V VR = 0 V VR = 0 V VR = 0 V VR = 0 V VR = 10 mV = 280 nm = 280 nm VR = 0 V VR = 0 V Ee = 100 W/cm
Symbol VR ID p S min, max 0.5 RSH NEP D* CJ IPh
O 9,14
O 6,35
5,08
for information only measured with Hg-LP UV-emitter as radiation source
Note: All measurements carried out with EPIGAP equipment
0 0, 5
Min
Typ 20 10 280 0.13
Max
Unit V
100
fA nm A/W
220 80 1 1.1x10 20 45
-15
380
nm nm T
W/ Hz
cm Hz W -1
7.9x1013
pF nA
Labeling
Type EPD-280-0-0.3-5
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Kopenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 1 of 2
Lot N
RD (typ.) [T ]
Quantity
Photodiode
Preliminary
EPD-280-0-0.3-5
11.04.2007 rev. 01/07
Typical responsivity to incident radiation, normalized to S @ = 280 nm
1,0
Short-circuit current vs. irradiance (typical)
2)
10
2
Responsivity (arb. units)
0,8
0,6
S hort-circuit current (A )
10
1
10
0
0,4
10
-1
0,2
10
-2
0,0 200 250 300 350 400
10
-3
10
-2
10
-1
Wavelength [nm]
10 2 Irradiance [mW/cm ]
0
10
1
10
2
Short-circuit current vs. ambient temperature
1,04
Short-circuit current (arb. units)
1,00
0,96
0,92 -40
-20
0
20 40 Ambient temperature [ C]
60
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Kopenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545
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